| PART |
Description |
Maker |
| BT134-D |
600V Vdrm 4A Triac, 1.7V Peak On-State Voltage, 0.5mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| BT236-D BT2.6-D |
600V Vdrm 6A Triac, 1.6V Peak On-State Voltage, 1.0mA Repetitive Peak Off-State Current
Sensitive Gate Triacs
|
SEMIWELL[SemiWell Semiconductor]
|
| BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
| BY329-1700S |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| NC316-144 NC316-288 NC316-72 |
Media Cross Connect垄芒 (MCC) Product Family
Media Cross Connect (MCC) Product Family
|
MRV Communications, Inc.
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| STK11C68-W30 STK11C68-W45 STK11C68-W45I STK11C68-C |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:8A; Holding Current:50mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Package/Case:TO-3; Current, It av:25A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
|
Electronic Theatre Controls, Inc.
|
